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均压驱动耦合型单驱动IGBT串联电路设计
引用本文:宋慧敏,田苗,吴俊锋,张志波,贾敏,金迪,杨永红.均压驱动耦合型单驱动IGBT串联电路设计[J].高压电器,2019,55(5):144-153.
作者姓名:宋慧敏  田苗  吴俊锋  张志波  贾敏  金迪  杨永红
作者单位:空军工程大学等离子体动力学重点实验室,西安,710038;95156部队,南宁,530048
基金项目:国家自然科学基金;国家自然科学基金;国家自然科学基金
摘    要:为给介质阻挡放电提供电压、频率、脉宽可调的高压脉冲,文中设计了均压驱动耦合型单驱动IGBT串联电路。该串联电路在每个IGBT两端并联一个动态均压与驱动信号输出耦合电路,在导通关断时,一方面保证IGBT两端电压不超过额定电压,另一方面为下级IGBT提供驱动截止信号。通过仿真研究,验证了电路原理的可行性,探索了元器件的选型规则。通过实验研究,实现了电源电压在0~15 kV可通断、频率在0~1 kHz可调节、脉冲宽度在一定范围内可变化,并成功实现介质阻挡放电。该电路解决了多驱动IGBT串联电路需要隔离高压电源及单驱动IGBT串联电路结构难以扩展,各级IGBT导通关断跟随性差,元器件容易损坏的缺陷。该电路同样适用于MOSFET,具有很好的应用前景。

关 键 词:高压脉冲  IGBT串联  单驱动  介质阻挡放电

Design of Voltage-sharing Driving Coupled Single Driving IGBT Series Circuit
SONG Huimin,TIAN Miao,WU Junfeng,ZHANG Zhibo,JIA Min,JIN Di,YANG Yonghong.Design of Voltage-sharing Driving Coupled Single Driving IGBT Series Circuit[J].High Voltage Apparatus,2019,55(5):144-153.
Authors:SONG Huimin  TIAN Miao  WU Junfeng  ZHANG Zhibo  JIA Min  JIN Di  YANG Yonghong
Affiliation:(Science and Technology on Plasma Dynamics Laboratory, Air Force Engineering University, Xi'an 710038, China;295156 Sub Unit, Nanning 530048, China)
Abstract:A single driving voltage sharing and driving coupled series IGBT is designed in order to provide pulse power with adjustable voltage, frequency and pulse width for dielectric barrier discharge. In this series circuit, a coupling circuit of a dynamic averaging voltage and a driving signal output is connected in parallel with each IGBT. When the circuit turns on or off, the voltage between each IGBT will be restricted under rated value, and supply a driving or cut-off signal for the next IGBT. The feasibility of the circuit principle is verified, and the criteria of the circuit components are explored by simulated. In experiment, the voltage can be adjusted between 0 and 15 kV, the frequency can vary from 0 to 1 kHz, the pulse width can be regulated within certain range with 8 series IGBT circuits. Dielectric barrier discharge is achieved by this series circuit. The traditional multi driving series IGBT must be isolated from high voltage power supply, and single driving series IGBT works with a fixed voltage and pulse width. The series circuit in this paper solves both problems and is also applicable for MOSFET, which owns great potential and worthwhile further study.
Keywords:high voltage pulse  series IGBT  single driving  DBD
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