| 碳含量对碳氮化硅薄膜化学结构和力学性能的影响 |
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| 引用本文： | 朴勇,徐军,高鹏,丁万昱,陆文琪,马腾才.碳含量对碳氮化硅薄膜化学结构和力学性能的影响[J].真空科学与技术学报,2006,26(6):526-529. |
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| 作者姓名： | 朴勇 徐军 高鹏 丁万昱 陆文琪 马腾才 |
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| 作者单位： | 大连理工大学,三束材料改性国家重点实验室,大连,116024 |
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| 摘 要： | 利用微波电子回旋共振（MW-ECR）等离子体增强非平衡磁控溅射法制备了碳氮化硅（SiCN）薄膜。研究结果表明，碳含量对薄膜化学结构、力学性能有很大影响。傅里叶变换红外光谱（FT-IR）和X射线光电子能谱（XPS）表征显示，随着碳靶溅射偏压由-450V提高到-650V，薄膜中碳含量由19．0％增加到27．1％，sp^3C-N键含量增多，薄膜生长速率由3．83nm／min提高到5．83nm／min，硬度在-600V时达到最大值25．36GPa。上述结果表明，提高碳靶溅射偏压，可以提高薄膜含碳量，得到性能较好的SiCN薄膜。
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| 关 键 词： | 微波ECR等离子体 化学结构 力学性能 |
| 文章编号： | 1672-7126（2006）06-0526-04 |
| 收稿时间： | 2006-04-05 |
| 修稿时间： | 2006年4月5日 |
Influence of C Content on Chemical Structure and Properties of Silicon Carbonitride Film |
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| Piao Yong,Xu Jun,Gao Peng,Ding Wanyu,Lu Wenqi,Ma Tengcai.Influence of C Content on Chemical Structure and Properties of Silicon Carbonitride Film[J].JOurnal of Vacuum Science and Technology,2006,26(6):526-529. |
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| Authors: | Piao Yong Xu Jun Gao Peng Ding Wanyu Lu Wenqi Ma Tengcai |
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| Affiliation: | State Key Laboratory of Material Modification by Laser, Ion and Electron Beams, Dalian Unitersity of Technology, Dalian 116024, China |
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| Abstract: | Silicon carbonitride(SiCN) films were prepared by microwave electron cyclotron resonance(ECR) plasma enhanced unbalance magnetron sputtering.The influence of carbon content on the chemical structures,optical as well as mechanical properties of the deposited SiCN films were characterized with Fourier transform infrared spectroscopy(FT-IR) X-ray photoelectron spectroscopy(XPS),and Nano-indentation.The results indicate that as the carbon target sputtering voltage decrease from-450 V to-650 V,the carbon content in the films increases from 19.0% to 27.1%,while the hardness reaches to the maximum of 25.35 GPa when the carbon target sputtering voltage is-600 V. |
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| Keywords: | SiCN |
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