CSD-La3TaO7薄膜外延生长行为研究

涂层导体是实现氧化物高温超导材料在液氮温区强磁场应用的关键材料。在低成本的轧制辅助双轴织构/化学溶液沉积（RABiTS/CSD）路线中，缓冲层的良好外延生长是实现超导层织构生长以及高载流能力的前提，因此研究缓冲层外延生长行为就显得非常必要。本文探索了CSD技术制备La3TaO7（LTO）缓冲层过程中前驱液的热分解行为以及热处理工艺路线对薄膜取向生长的影响，通过选取恰当的LTO前驱液以及快速热处理升温的方法最终获得了良好c轴织构的LTO薄膜。

The study of epitaxial growth behavior of CSD-La3TaO7

Coated conductors become the significant materials that provide the potential to support high current for electric utility and high magnetic field applications at 77 K. In RABiTS/CSD routs with low-cost, the epitaxial growth of buffer layer on textured metallic substrate is an essential precondition for the biaxial texture growth of superconducting layer and its high current carrying capacity. Therefore, the study of the epitaxial growth behavior of buffer layer becomes important. In this paper, we have explored the influence of the thermal decomposition behavior of LTO-gels and the heat-treatment process route on the texture and morphology evolution of buffer layer. LTO buffer layer with good c-axis texture and smooth surface could be obtained by choosing the suitable LTO precursor solution and adjusting a rapid elevated temperature processing methods.