| 金属平面半导体量子阱微腔自发发射 |
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| 引用本文： | 赵红东,张存善,周革,沈光地,张以谟. 金属平面半导体量子阱微腔自发发射[J]. 半导体学报, 2000, 21(1): 33-37 |
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| 作者姓名： | 赵红东 张存善 周革 沈光地 张以谟 |
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| 作者单位： | [1]天津大学精密仪器与光电子工程学院教育部光电信息技术科学 [2]天津大学精密仪器与光电子工程学院教育部光电信息 |
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| 基金项目： | 北京市自然科学基金;; |
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| 摘 要： | 应用微腔腔量子电动力学和半导体量子阱物理，讨论了平面半导体量子阱微腔的自发发射，得到了腔结构、量子阱参量和注入载流子下的微腔自发发射谱和载流子寿命．计算发现由于微腔和量子阱分别对光子和载流子的限制，平面微腔可以增进自发发射，具有很强单方向性．
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| 关 键 词： | 微腔 自发发射 量子阱 |
| 文章编号： | 0253-4177(2000)01-0033-05 |
| 修稿时间： | 1998-09-04 |
Spontaneous Emission in Quantum Well Planar Micro-Cavities with Metallic Mirrors 8 |
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| ZHAO Hong|dong ,,,ZHANG Cun|shan+,ZHOU Ge ,SHEN Guang|di and ZHANG Yi|mo. Spontaneous Emission in Quantum Well Planar Micro-Cavities with Metallic Mirrors 8[J]. Chinese Journal of Semiconductors, 2000, 21(1): 33-37 |
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| Authors: | ZHAO Hong|dong ZHANG Cun|shan+ ZHOU Ge SHEN Guang|di ZHANG Yi|mo |
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| Affiliation: | ZHAO Hong|dong 1,2,3,ZHANG Cun|shan+2,ZHOU Ge 1,SHEN Guang|di 3 and ZHANG Yi|mo 1 |
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| Abstract: | Based on cavity quantum electrodynamics and physics of semiconductor quantum well, the spontaneous emission and spontaneous emission lifetime of the carrier in quantum well planar micro-cavities with metallic mirrors have been discussed. The spontaneous emission spectra are obtained for different mirror reflectivity and different cavity length, when the injection carrier density is fixed. As a result, spontaneous emission intensity,especially in one direction, can be enhanced for the confinements of the photons and the carries by the cavity and the quantum well, respectively. |
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| Keywords: | Micro|Cavity Spontaneous Emission Quantum Well 4177(2000)01 0033 05 |
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