Low voltage n-type OFET based on double insulators |
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Authors: | Jian-lin Zhou and Fu-jia Zhang |
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Affiliation: | School of Physics Science and Technology, Lanzhou University, Lanzhou 730000, China |
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Abstract: | A top contact n-type organic field-effect transistor with low operating voltage was fabricated by employing Ta2O5/PMMA as the double insulators and PTCDI-Cl2 as the semiconductor active layer. The Ta2O5 layer was prepared by using simple economical anodization technique and the PMMA layer was prepared by using the spin-coating method. Compared with the OFET with single Ta2O5 insulator, the device with double insulators shows obviously better electrical performance. It has a field effect electron mobility of 0.063 cm2/Vs, an on/offratio of 1.7×104 and a threshold voltage of 2.3 V. |
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Keywords: | CLC numbers" target="_blank">CLC numbers TN386 |
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