| 艺参数对 a-CNx膜沉积的影响 |
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| 引用本文： | 肖兴成,江伟辉,宋力昕,田静芬,胡行方. 艺参数对 a-CNx膜沉积的影响[J]. 无机材料学报, 2000, 15(1) |
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| 作者姓名： | 肖兴成 江伟辉 宋力昕 田静芬 胡行方 |
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| 作者单位： | 中国科学院上海硅酸盐研究所,上海,200050 |
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| 基金项目： | 国家攀登计划!07－01，国家自然科学基金!59782006，中国科学院上海硅酸盐研究所所长择优基金!SZ97－4 |
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| 摘 要： | 研究了基本工艺参数对磁控溅射制备无定形氮化碳（ａ－ＣＮｘ）薄膜沉积的影响．实验结果表明：Ｎ２流量的增加提高了膜的沉积速率，同时提高了膜中氮含量．溅射功率的提高增加了沉积速率．偏压对硬质膜的制备是一关键的工艺参数，它不仅使薄膜致密、表面光滑，而且还可以提高膜中的Ｎ含量．
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| 关 键 词： | a－CN_x膜 工艺参数 沉积 |
Influence of Processing Parameters on the Deposition of a-CNx Films |
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| XIAO Xing-Cheng,JIANG Wei-Hui,SONG Li-Xin,TIAN Jing-Fen,HU Xing-Fang. Influence of Processing Parameters on the Deposition of a-CNx Films[J]. Journal of Inorganic Materials, 2000, 15(1) |
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| Authors: | XIAO Xing-Cheng JIANG Wei-Hui SONG Li-Xin TIAN Jing-Fen HU Xing-Fang |
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| Abstract: | The influence of basic processing parameters on the deposition of a-CN_x was studied.The results show that the increase of N flux enhances the deposition rate of the film as well asincreases its N content. While higher sputtering power leads to higher deposition rate. Further-more, the employment of bias will prove to be beneficial in the preparation of CN_x film in thatit not only facilitates the densification process and produces a smoother surface morphology, butalso increases the content of N in the film. |
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| Keywords: | a-CN_x films processing parameters deposition. |
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