| 直流磁控反应溅射制备IrO2薄膜 |
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| 引用本文： | 王世军,丁爱丽,仇萍荪,何夕云,罗维根. 直流磁控反应溅射制备IrO2薄膜[J]. 无机材料学报, 2000, 15(4): 733 |
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| 作者姓名： | 王世军 丁爱丽 仇萍荪 何夕云 罗维根 |
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| 作者单位： | 中国科学院上海硅酸盐研究所无机功能材料开放实验室, 上海 200050 |
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| 摘 要： | 为研究氧化依（ＩｒＯ２）对ＰＺＴ铁电薄膜疲劳性能的影响，利用直流（ＤＣ）磁控反应溅射（ｓｐｕｔｔｅｒｉｎｇ）工艺成功地在ＳｉＯ２／Ｓｉ（１００）衬底上制得了高度取向的ＩｒＯ２薄膜．并在其上制成ＰＺＴ铁电薄膜．讨论了溅射参数（溅射功率、 Ａｒ／Ｏ２比、衬底温度）以及退火条件对氧化铱薄膜的结晶、取向和形态的影响．
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| 关 键 词： | 氧化铱薄膜 直流磁控反应溅射 热退火 |
| 收稿时间： | 1999-07-15 |
| 修稿时间： | 1999-09-23 |
IrO2 Thin Films Deposited by DC Magnetron Sputtering Method |
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| WANG Shi-Jun,Ding Ai-Li,QIU Ping-Sun,HE Xi-Yun,LUO Wei-Gen. IrO2 Thin Films Deposited by DC Magnetron Sputtering Method[J]. Journal of Inorganic Materials, 2000, 15(4): 733 |
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| Authors: | WANG Shi-Jun Ding Ai-Li QIU Ping-Sun HE Xi-Yun LUO Wei-Gen |
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| Affiliation: | Laboratory of Functional Inorganic Materials; Shanghai Institute of Ceramics; Chinese Academy of Sciences; Shanghai 200050; China |
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| Abstract: | Iridium oxide (IrO_2) thin films were successfully grown on SiO2/Si(100) substrate by a DC magnetron reactive sputtering method with an Ir target(99.9% purity). PZT ferroelectric thin films were deposited by a sol-gel method. The as-deposited thin films were annealed with a thermal annealing process, after that the films were highly directed at (110) or (200). The effect of sputtering parameters such as gun power, oxygen partial pressure (Ar/O_2) and growth temperature and annealing conditions on the crystalline nature and morphology of IrO_2 thin films was discussed. |
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| Keywords: | IrO_2 thin film DC magnetron reactive sputtering thermal annealing |
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