| In/Al掺杂高电阻CdZnTe晶体载流子传输特性研究 |
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| 引用本文： | 徐亚东,徐凌燕,王涛,查刚强,傅莉,介万奇,Sellin P.In/Al掺杂高电阻CdZnTe晶体载流子传输特性研究[J].半导体学报,2009,30(8):082002-4. |
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| 作者姓名： | 徐亚东 徐凌燕 王涛 查刚强 傅莉 介万奇 Sellin P |
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| 作者单位： | School of Material Science, Northwestern Polytechnical University, Xi’an 710072, China; Department of Physics, University of Surrey, Guildford, GU2 7XH, UK;School of Material Science, Northwestern Polytechnical University, Xi’an 710072, China;School of Material Science, Northwestern Polytechnical University, Xi’an 710072, China;School of Material Science, Northwestern Polytechnical University, Xi’an 710072, China;School of Material Science, Northwestern Polytechnical University, Xi’an 710072, China;School of Material Science, Northwestern Polytechnical University, Xi’an 710072, China;Department of Physics, University of Surrey, Guildford, GU2 7XH, UK |
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| 基金项目： | 国家自然科学基金（批准号：50772091），教育部“新世纪人才支持计划”（批准号：NCET-07-0689） |
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| 摘 要： | To evaluate the charge transport properties of as-grown high resistivity CdZnTe crystals doped with In/Al, the α particle spectroscopic response was measured using an un-collimated 241Am （5.48 MeV） radioactive source at room temperature. The electron mobility lifetime products （μτ）e of the CdZnTe crystals were predicted by fitting plots of photo-peak position versus electrical field strength using the single carrier Hecht equation. A TOF technique was employed to evaluate the electron mobility for CdZnTe crystals. The mobility was obtained by fitting the electron drift velocities as a function of the electrical field strengths, where the drift velocities were achieved by analyzing the rise-time distributions of the voltage pulses formed by a preamplifier. A fabricated CdZnTe planar detector based on a low In concentration doped CdZnTe crystal with （μτ）e = 2.3 × 10？3 cm2/V and μe =1000 cm2/（V·s）, respectively, exhibits an excellent γ-ray spectral resolution of 6.4% （FWHM = 3.8 keV） for an un-collimated 241Am @ 59.54 keV isotope.
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| 关 键 词： | 碲锌镉晶体 高电阻率 传输性能 电子迁移率 CdZnTe晶体 光谱分辨率 碲锌镉探测器 铝 |
| 修稿时间： | 4/7/2009 8:35:24 AM |
Charge transport performance of high resistivity CdZnTe crystals doped with In/Al |
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| Xu Yadong,Xu Lingyan,Wang Tao,Zha Gangqiang,Fu Li,Jie Wanqi and Sellin P.Charge transport performance of high resistivity CdZnTe crystals doped with In/Al[J].Chinese Journal of Semiconductors,2009,30(8):082002-4. |
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| Authors: | Xu Yadong Xu Lingyan Wang Tao Zha Gangqiang Fu Li Jie Wanqi and Sellin P |
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| Affiliation: | 1 School of Material Science;Northwestern Polytechnical University;Xi'an 710072;China;2 Department of Physics;University of Surrey;Guildford;GU2 7XH;UK |
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| Abstract: | To evaluate the charge transport properties of as-grown high resistivity CdZnTe crystals doped with In/Al, the particle spectroscopic response was measured using an un-collimated 241Am (5.48 MeV) radioactive source at room temperature. The electron mobil |
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| Keywords: | CdZnTe crystals particle pulse height spectra charge transport performance In/Al doping |
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