| 双极晶体管g－r噪声模型与深能级分析 |
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| 引用本文： | 庄奕琪,孙青,侯洵. 双极晶体管g－r噪声模型与深能级分析[J]. 电子学报, 1996, 0(8) |
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| 作者姓名： | 庄奕琪 孙青 侯洵 |
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| 作者单位： | 西安电子科技大学微电子研究所，中国科学院西安光学精密机械研究所 |
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| 摘 要： | 本文根据发射结空间电荷区深能级缺陷诱生ｇ－ｒ噪声机构，建立了双极晶体管ｇ－ｒ噪声定量分析模型，从而对实验上观察到的双极晶体管ｇ－ｒ噪声的偏置特性作出了合理的解释．基于该模型，提出了一种利用ｇ－ｒ噪声测量确定双极型器件深能级参数的新方法．
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| 关 键 词： | g－r噪声，双极晶体管，深能级 |
g-r Noise Modeling and Deep-Level Analysis for Bipolar Transistors |
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| Zhuang Yiqi,Sun Qing. g-r Noise Modeling and Deep-Level Analysis for Bipolar Transistors[J]. Acta Electronica Sinica, 1996, 0(8) |
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| Authors: | Zhuang Yiqi Sun Qing |
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| Abstract: | The physical mechanism of g-r noise induced by deep-level defects in the emitter space-charge region for bipolar transistors is analyzed quantitatively and a new model on g-r noise in bipolar transistors is developed. The experimental dependence of g-r noise on the bias voltage is explained from the model. Based on the model,the deep-level parameters in bipolar devices are determined by means of g-r noise measurement. |
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| Keywords: | g-r noise Bipolar transistor Deep-level |
| 本文献已被 CNKI 等数据库收录！ |
