| 0.2μm GaAs PHEMT3.1~10.6GHz宽带低噪声放大器设计 |
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| 引用本文： | 华明清,王志功,丁敬峰.0.2μm GaAs PHEMT3.1~10.6GHz宽带低噪声放大器设计[J].固体电子学研究与进展,2007,27(1):32-36. |
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| 作者姓名： | 华明清 王志功 丁敬峰 |
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| 作者单位： | 东南大学射频与光电集成电路研究所,南京,210096 |
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| 摘 要： | 采用OMMIC公司提供的0.2μm GaAs PHEMT工艺(fT=60 GHz)设计并实现了一种适用于宽带无线通信系统接收前端的低噪声放大器。在3.1~10.6 GHz的频带内测试结果如下:最高增益为13 dB;增益波动<2dB;输入回波损耗S11<-11 dB;输出回波损耗S22<-16 dB;噪声系数NF<3.9 dB。5 V电源供电,功耗为120mW。芯片面积为0.5 mm×0.9 mm。与近期公开发表的宽带低噪声放大器测试结果相比较,本电路结构具有芯片面积小、工作带宽大、噪声系数低的优点。
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| 关 键 词： | 低噪声放大器 赝晶高电子迁移率晶体管 有源匹配 噪声系数 |
| 文章编号： | 1000-3819（2007）01-032-05 |
| 收稿时间： | 2006-03-08 |
| 修稿时间： | 2006-05-28 |
Design of 3.1～10.6 GHz Wideband Low Noise Amplifier with 0. 2 μm GaAs PHEMT |
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| HUA Mingqing,WANG Zhigong,DING Jingfeng.Design of 3.1～10.6 GHz Wideband Low Noise Amplifier with 0. 2 μm GaAs PHEMT[J].Research & Progress of Solid State Electronics,2007,27(1):32-36. |
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| Authors: | HUA Mingqing WANG Zhigong DING Jingfeng |
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| Abstract: | A low noise amplifier(LNA) for ultra-wideband(UWB) front-ends is designed and fabricated using OMMIC's 0.2 μm GaAs PHEMT(pseudomorphic high electron mobility transistors) technology.The performances of the LNA have been measured in the frequency range of 3.1～10.6 GHz.The peak gain is 14 dB;The input and output return losses are-11 dB and-16 dB,respectively.The noise figure(NF) is less than 3.9 dB.It consumes a DC power of 120 mW under a 5 V supply.The chip area is 0.6 mm×1.5 mm.A comparison with recently published UWB LNAs shows this LNA has smaller chip area,broader bandwidth and lower NF. |
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| Keywords: | low noise amplifier pseudomorphic high electron mobility transistors active matching noise figure |
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