改性纳米BN/甲基乙烯基硅橡胶导热复合材料的制备 |
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引用本文: | 钟洨,孟旭东,张睿涵,张一坤,顾军渭.改性纳米BN/甲基乙烯基硅橡胶导热复合材料的制备[J].复合材料学报,2019,36(11):2644-2650. |
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作者姓名: | 钟洨 孟旭东 张睿涵 张一坤 顾军渭 |
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作者单位: | 1.西北工业大学 理学院 应用化学系, 西安 710129; |
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基金项目: | 国家自然科学基金(51773169;51403175);2018大学生创新、创业训练项目 |
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摘 要: | 以甲基乙烯基硅橡胶(MVSR)为基体,硅烷偶联剂KH550与聚倍半硅氧烷(POSS)结合改性的纳米BN(POSS-g-nBN)为导热填料,经混炼-热压制备POSS-g-nBN/MVSR导热复合材料。结果表明,POSS-g-nBN/MVSR导热复合材料的导热系数(λ)、介电常数(ε)和介电损耗正切值(tanδ)均随nBN用量增加而增大。相同nBN用量下,表面功能化改性有助于进一步提高nBN/MVSR导热复合材料的λ,降低ε和tanδ。当POSS-g-nBN用量为30vol%时,POSS-g-nBN/MVSR导热复合材料的λ为0.92 W(mK)-1,约为纯MVSR的(λ=0.18 W(mK)-1)5倍,也高于相同nBN用量的nBN/MVSR导热复合材料的λ(0.77 W(mK)-1)。相比未改性nBN,POSS-g-nBN更易在MVSR基体内形成导热通路且和MVSR基体具有相对更低的界面热障。当POSS-g-nBN用量为30vol%时,POSS-g-nBN/MVSR导热复合材料的ε和tanδ分别为3.39和0.0049,略低于相同nBN用量的nBN/MVSR导热复合材料的ε(3.43)和tanδ(0.0057)。
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关 键 词: | 甲基乙烯基硅橡胶(MVSR) 氮化硼(BN) 聚倍半硅氧烷(POSS) 导热复合材料 介电性能 |
收稿时间: | 2018-11-11 |
Preparation of functionalized nano BN/methyl vinyl silicone rubber thermally conductive composites |
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Affiliation: | 1.Department of Chemistry, School of Science, Northwestern Polytechnical University, Xi'an 710129, China;2.The 54 th Research Institute of CETC, Shijiazhuang 050081, China |
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Abstract: | The silane coupling agent KH550 and polyhedral oligomeric silsesquioxane (POSS) functionalized nano BN (nBN)/methyl vinyl silicone rubber (POSS-g-nBN/MVSR) thermally conductive composites were fabricated via kneading followed by hot compression method. The thermally conductive coefficient (λ), dielectric constant (ε) and dielectric loss tangent (tanδ) values of the nBN/MVSR composites are all increased with increasing addition of nBN. For a given nBN loading, the surface functionalization of nBN can further increase λ and decrease ε and tanδ of the nBN/MVSR composites. The maximum λ value of the POSS-g-nBN/MVSR composites improves to 0.92 W/(mK) with 30vol% POSS-g-nBN, which is about 5 times of the pure MVSR matrix (0.18 W(mK)-1) and also higher than that of nBN/MVSR composites with 30vol% nBN (0.77 W(mK)-1). In comparison to that of pristine nBN fillers, POSS-g-nBN fillers are easier to form thermally conductive channels in MVSR matrix and possess relatively lower interfacial thermal resistance with MVSR matrix. The corresponding ε and tanδ of the POSS-g-nBN/MVSR composites are 3.39 and 0.0049, respectively, slightly lower than that of nBN/MVSR composites with 30vol% nBN (ε of 3.43 and tanδ of 0.0057). |
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