An Accurate Value for the Absorption Coefficient of Silicon at 633 nm |
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| Authors: | Jon Geist A Russell Schaefer Jun-Feng Song Yun Hsia Wang Edward F Zalewski |
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| Affiliation: | National Institute of Standards and Technology, Gaithersburg, MD 20899;Science Applications International Corporation, 4161 Campus Point Court, San Diego, CA 92121;National Institute of Standards and Technology, Gaithersburg, MD 20899 |
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| Abstract: | High-accuracy transmission measurements at an optical wavelength of 633 nm and mechanical measurements of the thickness of a 13-µm thick silicon-crystal film have been used to calculate the absorption and extinction coefficients of silicon at 633 nm. The results are 3105±62 cm−1 and 0.01564±0.00031, respectively. These results are about 15% less than current handbook data for the same quantities, but are in good agreement with a recent fit to one set of data described in the literature. |
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| Keywords: | absorption coefficient etch stop extinction coefficient HeNe high accuracy silicon |
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