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Effect of the oxygen flow on the properties of ITO thin films deposited by ion beam assisted deposition (IBAD) |
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| Authors: | Li-Jian Meng Jinsong Gao Shigeng Song |
| Affiliation: | a Departamento de Física, Instituto Superior de Engenharia do Porto, Rua Dr. António Bernardino de Almeida, 431, 4200-072 Porto, Portugal b Centro de Física, Universidade do Minho, 4700 Braga, Portugal c Center of Optical Technology, Changchun Institute of Optics, fine Mechanics and Physics of Chinese Academy of Science, PO Box 1024, 16# East Nanhu Road, Changchun 130033, China d Thin Film Centre, University of Paisley, High St, Paisley, PA1 2BE, Scotland |
| Abstract: | ITO films were deposited onto glass substrates by ion beam assisted deposition method. The oxygen ions were produced using a Kaufman ion source. The oxygen flow was varied from 20 until 60 sccm and the effect of the oxygen flow on properties of ITO films has been studied. The structural properties of the film were characterized by X-ray diffraction and atomic force microscopy. The optical properties were characterized by optical transmission measurements and the optical constants (refractive index n and extinction coefficient k) and film thickness have been obtained by fitting the transmittance using a semi-quantum model. The electrical properties were characterized by Hall effect measurements. It has been found that the ITO film with low electrical resistivity and high transmittance can be obtained with 40 sccm oxygen flow (the working pressure is about 2.3 × 10− 2 Pa at this oxygen flow). |
| Keywords: | ITO Thin Film Ion beam assisted deposition IR reflectance optical and electrical properties |
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