Deposition of GaN films on (1 1 1) Si substrates by alternate supply of TMG and NH3 |
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Authors: | Jyh-Rong Gong Ming-Fa Yeh Yu-Li Tsai |
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Affiliation: | Department of Materials Science and Engineering, Feng Chia University, # 100 Wen-hwa Road, Taichung 407, Taiwan, ROC |
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Abstract: | GaN films were grown on (1 1 1) Si substrates at 1000 °C by separate admittances of trimethylgallium (TMG) and ammonia (NH3). To achieve high quality GaN films, the optimization in growth temperature and layer thickness of AlN buffer layer between GaN film and Si substrate is required. Cross-sectional transmission electron microscopic observations of the GaN/(1 1 1)Si samples show a nearly parallel orientation relationship between the (0 0 0 1) planes of GaN film and the (1 1 1) planes of Si substrate. Room temperature photoluminescence spectra of high quality GaN films show a strong near band edge emission and a weak yellow luminescence. The achievement of high quality GaN films on (1 1 1) Si substrates is believed to be attributed to enhancement in surface mobilities of the adsorbed surface species and adequate accommodation of lattice mismatch between high temperature AlN buffer layer and Si substrate. |
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Keywords: | GaN on Si High temperature AlN buffer layer |
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