| 立式高真空MOCVD装置CaN外延生长与器件制备 |
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| 引用本文： | 朱丽萍,叶志镇,赵炳辉,王贤锋,赵浙. 立式高真空MOCVD装置CaN外延生长与器件制备[J]. 真空科学与技术学报, 2004, 24(6): 448-450 |
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| 作者姓名： | 朱丽萍 叶志镇 赵炳辉 王贤锋 赵浙 |
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| 作者单位： | 浙江大学硅材料国家重点实验室,杭州,310027 |
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| 基金项目： | 国家重点基础研究发展计划(973计划)，教育部留学回国人员科研启动基金，国家自然科学基金 |
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| 摘 要： | 自行设计了一套具有创新性的研究型立式高真空MOCVD装置,能够较好的调节反应气体的流动状态,从而在衬底上生长大面积均匀的外延层.利用该装置在蓝宝石和硅单晶衬底上成功地生长出高质量的GaN晶体薄膜.在蓝宝石衬底上生长出n、p型GaN以及多量子阱多层结构材料,并成功制备了GaN基多层量子阱结构的蓝光发光二极管,性能良好,具有实用价值.
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| 关 键 词： | MOCVD GaN 外延生长 多量子阱 发光二极管 |
| 文章编号： | 1672-7126(2004)06-0448-03 |
| 修稿时间： | 2004-02-16 |
Development of Vertical High-Vacuum MOCVD and Its Applications in GaN Epitaxial Growth and GaN-Based Device Fabrication |
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| Zhu Liping,Ye Zhizhen,Zhao Binghui,Ni Xianfeng and Zhao Zhe. Development of Vertical High-Vacuum MOCVD and Its Applications in GaN Epitaxial Growth and GaN-Based Device Fabrication[J]. JOurnal of Vacuum Science and Technology, 2004, 24(6): 448-450 |
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| Authors: | Zhu Liping Ye Zhizhen Zhao Binghui Ni Xianfeng Zhao Zhe |
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| Affiliation: | Zhu Liping*,Ye Zhizhen,Zhao Binghui,Ni Xianfeng and Zhao Zhe |
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| Abstract: | A novel type of vertical high-vacuum MOCVD system has been developed to grow hig hly uniform epitaxial films of fairly large area by precisely controlling the re active gases flow,on sapphire and silicon substrates,respectively.High quality,p -type and n-type GaN crystalling films as well as multi-layered material for qua ntum-well fabrication have been successfully grown on sapphire substrate.Moreove r,blue light emission diodes of GaN multi-layer,grown with the system,were also fabricated with satisfactory performance. |
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| Keywords: | MOCVD GaN Epitaxial growth Multi quantum well Light emitting diode |
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