Low-loss and ultra-low temperature sintering microwave dielectrics of pure and Ag-modified K2Mg2(MoO4)3 ceramics |
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| Affiliation: | 1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;2. Jiangxi Guo Chuang Industrial Park Development Co., Ltd., Ganzhou 341000, China;1. State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an, 710049, China;2. Department of Materials Science and Engineering & Shenzhen Engineering Research Center for Novel Electronic Information Materials and Devices, Southern University of Science and Technology, Shenzhen 518055, China;1. Guangxi Universities Key Laboratory of Non-ferrous Metal Oxide Electronic Functional Materials and Devices, Guangxi Key Laboratory of Optical and Electronic Materials and Devices, College of Materials Science and Engineering, Guilin University of Technology, Guilin, 541004, China;2. College of Science, Guilin University of Technology, Guilin, 541004, China;1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China;2. Yangtze River Delta Research Institute of UESTC (Huzhou), Huzhou, 313000, China |
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| Abstract: | Novel K2–2xAg2xMg2(MoO4)3 (x = 0–0.09) ceramics were synthesized by conventional solid-state sintering method. Based on the X-ray diffraction (XRD) patterns, all samples were identified to belong to an orthorhombic structure with a space group of P212121(19). The pure phase K2Mg2(MoO4)3 specimen when sintered at 590 °C revealed the favorable microwave dielectric properties: εr of 6.91, Q×f of 21,900 GHz and τf of ?164 ppm/°C. The substitution of Ag+ for K+ in K2–2xAg2xMg2(MoO4)3 (x = 0.01–0.09) ceramics led to the more stable structure and dramatically enhanced the Q×f to a value of 54,900 GHz at 500 °C. The microwave dielectric properties were related to the relative density, microstructure, ionic polarization, lattice energy, packing fraction, and bond valence of the ceramics. It was suggested that for ultra-low temperature co-fired ceramic (ULTCC) applications, K1.86Ag0.14Mg2(MoO4)3 ceramic could be sintered at 500 °C, which revealed an excellent combination of microwave dielectric properties (εr =7.34, Q×f =54,900 GHz and τf =–156 ppm/°C) and good chemical compatibility with aluminum electrodes. |
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| Keywords: | ULTCC Low-loss Microwave dielectric properties 5 G system |
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