Triple-doping of (Ga1/2Nb1/2)xTi1-xO2 ceramics with Al3+ for enhanced giant dielectric response with simultaneous decrease in dielectric loss |
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| Affiliation: | 1. Giant Dielectric and Computational Design Research Group (GD–CDR), Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen 40002, Thailand;2. Synchrotron Light Research Institute (Public Organization), 111 University Avenue, Muang District, Nakhon Ratchasima 30000, Thailand;1. Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument, Beijing Information Science & Technology University, Beijing 100083, China;2. Beijing Institute of Aeronautical Materials, Aero Engine Corporation of China, Beijing 100095, China;3. AECC Sichuan Gas Turbine Establishment, Mianyang 621000, China;4. Research Institute Aero-Engine, Beihang University, 100190, China;1. School of Materials Science and Engineering, Nanjing Institute of Technology, Nanjing 211167, PR China;2. Institute of Intelligent Manufacturing Technology, Shenzhen Polytechnic, Shenzhen 518055, PR China;3. Jiangsu Key Laboratory of Advanced Structural Materials and Application Technology, Nanjing 211167, PR China;4. The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081, PR China;5. School of Materials, Sun Yat-sen University, Guangzhou 510275, PR China;1. Materials Science and Engineering Department, The Pennsylvania State University, University Park, PA 16802, USA;2. Materials Research Institute, Millennium Science Complex, University Park, PA 16802, USA;1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;2. Yangtze River Delta Research Institute of UESTC (Huzhou), Huzhou 313000, China |
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| Abstract: | An acceptor-donor co-doped (Ga1/2Nb1/2)0.1Ti0.9O2 ceramic is triple-doped with Al3+, followed by sintering at 1450 °C for 5 h to obtain (AlxGa1/2-xNb1/2)0.1Ti0.9O2 ceramics with improved giant dielectric properties. Homogeneous dispersion of all dopants inside the grains, along with the partially segregated dispersion of the Ga3+ dopant along the grain boundaries, is observed. The (AlxGa1/2-xNb1/2)0.1Ti0.9O2 ceramics exhibit high dielectric permittivities (ε′～4.2–5.1 × 104) and low loss tangents (tanδ～0.007–0.010), as well as a low-temperature coefficients (<±15%) between ? 60 and 200 °C. At 1 kHz, tanδ is significantly reduced by ～4.4 times, while ε′ is increased by ～3.5 times, which is attributed to the higher Al3+/Ga3+ ratio. The value of tanδ at 200 °C is as low as 0.04. The significantly improved dielectric properties are explained based on internal and surface barrier-layer capacitor effects, which are primarily produced by the Ga3+ and Al3+ dopants, respectively, whereas the semiconducting grains are attributed to Nb5+ doping ions. |
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| Keywords: | Giant dielectric permittivity Loss tangent Temperature coefficient |
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