A leaf-like structured ITO conductive transparent thin film from visible to near-infrared region with enhanced stability |
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| Affiliation: | 1. Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument, Beijing Information Science & Technology University, Beijing 100083, China;2. Beijing Institute of Aeronautical Materials, Aero Engine Corporation of China, Beijing 100095, China;3. AECC Sichuan Gas Turbine Establishment, Mianyang 621000, China;4. Research Institute Aero-Engine, Beihang University, 100190, China;1. School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, Anhui, China;2. National Key Laboratory of Science and Technology on Vacuum Technology & Physics, Lanzhou Institute of Physics, Lanzhou 730000, China;3. State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China;1. Giant Dielectric and Computational Design Research Group (GD–CDR), Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen 40002, Thailand;2. Synchrotron Light Research Institute (Public Organization), 111 University Avenue, Muang District, Nakhon Ratchasima 30000, Thailand;1. Central Institute of Engineering, Electronics and Analytics – and Engineering and Technology (ZEA-1), Forschungszentrum Jülich GmbH, Jülich, Germany;2. Institute of Energy and Climate Research – Materials Synthesis and Processing (IEK-1), Forschungszentrum Jülich GmbH, Jülich, Germany;3. Faculty of Mechanical Engineering, RWTH Aachen University, Aachen, Germany;1. Department of 3D Printing Materials, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Seongsangu, Changwon, Gyeongnam 51508, South Korea;2. School of Materials Science and Engineering, Pusan National University, Busan 46241, South Korea;1. School of Mechanical Engineering, Shanghai Jiao Tong University, 800 Dongchuan Rd, Shanghai 200240, China;2. Shanghai Key Laboratory of Advanced High-Temperature Materials and Precision Forming, School of Materials Science and Engineering, Shanghai Jiao Tong University, 800 Dongchuan Rd, Shanghai 200240, China;3. Department of Electronic Engineering, Shanghai Jiao Tong University, 800 Dongchuan Rd, Shanghai 200240, China |
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| Abstract: | ITO thin films as the optical and electrical windows to transform photons and charges have been applied in many areas. Here, a leaf-like structured particle is composed of small particles growing along three different orientations leading to low thermal stress accompanied by well transmittance (85%) in a wide wavelength range from visible to near-infrared region and a narrowed band gap 3.07 eV. The evolution of structure and electronic performance was studied to obtain the low resistivity (12 μΩ m) and enhanced stability of the film (1000 °C). The leaf-like structure can be maintained under 600 ℃ and the electrical properties can be modified in He and N2 atmosphere, owing to the reduced defects, increased concentration of Sn and carrier mobility. Although the structure has changed after being annealed at 1000 °C in N2, the thin film performs excellent electrical properties (?3.44 × 1020 cm?3 and 28 cm2 V?1 s?1). |
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| Keywords: | Thin film Electrical properties Transparent ceramics Annealing |
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