Fabrication of Si3N4 ceramics with high thermal conductivity and flexural strength via novel two-step gas-pressure sintering |
| |
| Affiliation: | 1. State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China;2. School of Electrical Engineering, Xi’an Jiaotong University, Xi’an 710049, China;3. State Grid Anhui Electric Power Co., Ltd, Anhui 230061, China;1. School of Mechanical-Electronic and Vehicle Engineering, Weifang University, Weifang, 261061, China;2. Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), Institute of Ceramics and Powder Metallurgy, School of Materials Science and Engineering, Northeastern University, Shenyang, Liaoning, 110819, China;3. Shandong Dongda New Material Research Institute Co, Ltd, Weifang, Shandong, 261200, China;1. School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, China;2. Hefei Shengda Electronic Technology Industry Co. Ltd., Hefei 230088, China;3. 43rd Institute, China Electronics Technology Group Corporation, Hefei 230088, China;4. Anhui Province Key Laboratory of Microsystem, Hefei 230088, China |
| |
| Abstract: | Si3N4 ceramic substrates serving as heat dissipater and supporting component are required to have excellent thermal and mechanical properties. To prepare Si3N4 with desirable properties, a novel two-step gas-pressure sintering route including a pre-sintering step followed by a high-temperature sintering step was devised. The effects of pre-sintering temperature (1500 – 1600 °C) on the phase transformation, microstructure, thermal and mechanical properties of the samples were studied. The pre-sintering temperature played an important role in adjusting the Si3N4 particles’ rearrangement and α→β transformation rate. Furthermore, the densification process for the Si3N4 ceramics prepared via the two-step gas-pressure sintering was revealed. After sintered at 1525 °C for 3 h followed by a high-temperature sintering at 1850 °C for another 3 h, the prepared Si3N4 compact with a bimodal microstructure presented the highest thermal conductivity and flexural strength of 79.42 W·m?1·K?1 and 801 MPa, respectively, which holds great application prospects as ceramic substrates. |
| |
| Keywords: | Silicon nitride Gas-pressure sintering Bimodal microstructure Thermal conductivity Flexural strength |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
