Achieving high energy storage performance of Pb(Lu1/2Nb1/2)O3 antiferroelectric ceramics via equivalent A-site engineering |
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| Affiliation: | 1. Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China;2. University of Chinese Academy of Sciences, Beijing 100049, China;3. Department of Materials and Earth Science, Technical University of Darmstadt, Alarich-Weiss-Straße 2, 64287 Darmstadt, Germany;1. Division of Nonmetallic-Inorganic Materials, Department of Materials and Earth Sciences, Technical University of Darmstadt, 64287 Darmstadt, Germany;2. Institute for Chemistry and Technology of Materials, Graz University of Technology, Stremayrgasse 9, 8010 Graz, Austria;1. Laboratory of Dielectric Functional Materials, School of Materials Science & Engineering, Anhui University, Hefei 230601, China;2. Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials (Anhui University), Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China;3. School of Materials Science & Engineering, Tongji University, 4800 Caoan Road, Shanghai 201804, China;1. Shaanxi Province Key Laboratory for Electrical Materials and Infiltration Technology, School of Materials Science and Engineering, Xi’an University of Technology, Xi’an 710048, China;2. Department of Materials and Earth Sciences, Technical University of Darmstadt, Darmstadt 64287, Germany;3. Laboratory of Thin Film Techniques and Optical Test, School of Photoelectrical Engineering, Xi’an Technological University, Xi’an 710032, China;4. Guangxi Key Laboratory of Optical and Electronic Materials and Devices, College of Materials Science and Engineering, Guilin University of Technology, Guilin 541004, China;1. Jo?ef Stefan Institute, Jamova cesta 39, 1000 Ljubljana, Slovenia;2. Jo?ef Stefan International Postgraduate School, Jamova cesta 39, 1000 Ljubljana, Slovenia;3. University of Ljubljana, Faculty of Mathematics and Physics, Jadranska cesta 19, 1000 Ljubljana, Slovenia;1. Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Faculty of Electronic and Information Engineering, Xi''an Jiaotong University, Xi''an, 710049, China;2. School of Materials and Energy, Southwest University, Chongqing 400715, China;3. School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg 620000, Russia;4. State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi’an Jiaotong University, Xi’an 710049, China |
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| Abstract: | Manipulating the critical switching field between antiferroelectric (AFE) state and ferroelectric (FE) is an important concept for tuning the energy storage performance of AFEs. As one of the lead-based AFE systems, Pb(Lu1/2Nb1/2)O3 promises high potential in the miniaturization of pulsed power capacitors, but the extremely high critical switching field and low induced saturated polarization demonstrate severe drawbacks with respect to temperature stability and flexibility. Here, A-site Ba2+ doping engineering is used to effectively reduce the critical switching field and improve the saturated polarization in BaxPb1-x(Lu1/2Nb1/2)O3 (0.01 ≤ x ≤ 0.08, abbreviated as xBa-PLN) ceramics. We found the AFE-FE phase transition can be occurred at 80ºC with a high energy storage density of 4.03 J/cm3 for Ba0.06Pb0.94(Lu1/2Nb1/2)O3 ceramic. Our results show that Ba2+ additions destroy the antiparallel structure of AFE phase, and finally reduce the critical switching field, demonstrating a potential alternative to modulate the energy storage performance of AFEs. |
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| Keywords: | Antiferroelectric ceramics Electrical properties Dielectric A-site doping engineering |
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