| Affiliation: | 1. School of Electronic and Information Engineering & State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China;2. Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China;3. Shenzhen Engineering Research Center for Novel Electronic Information Materials and Devices, Southern University of Science and Technology, Shenzhen 518055, China;1. Shanghai Key Laboratory of High Temperature Superconductors, Shanghai Frontiers Science Center of Quantum and Superconducting Matter States, Department of Physics, Shanghai University, Shanghai 200444, China;2. Shanghai Creative Superconductor Technologies Co. Ltd., Shanghai 201401, China;1. State Key Laboratory for Powder Metallurgy, Central South University, Changsha 410083, China;2. Shenzhen Research Institute, Central South University, Shenzhen 518057, China;1. School of Physics and Information Technology, Shaanxi Normal University, Xi''an, 710062, China;2. School of Physics and Telecommunication Engineering, Shaanxi University of Technology, Hanzhong, 723001, China;1. Laboratory of Thin Film Techniques and Optical Test, Xi''an Technological University, Xi’an 710032, Shaanxi, China;2. Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering, Xi’an Jiaotong University, Xi''an 710049, China;3. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, Anhui, China;4. Physics Department, Faculty of Science, Tanta University, Al-Geish st., Tanta 31527, Egypt;1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;2. Information Materials and Device Applications Key Laboratory of Sichuan Provincial Universities, Chengdu University of Information Technology, Chengdu 610225, China;3. Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou, China;1. Key Laboratory of Multifunctional Materials and Structures, Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi''an 710049, Shaanxi, China;2. Micro-optoelectronic Systems Laboratories, Xi’an Technological University, Xi’an, Shaanxi 710032, China;3. School of Material Science and Energy Engineering, Foshan University, Foshan, Guangdong 528000, China;4. School of Electronic and Information Engineering, Hangzhou Dianzi University, Hangzhou 310018, China;5. School of Electronics and Communication Engineering, Lovely Professional University, Jalandhar, Punjab, India;6. Telecommunication and Materials Science and Engineering of Laboratory (LOCEM), Physics Department, Federal University of Ceará (UFC), Pici Campus, Fortaleza, Ceará 60455–760, Brazil;7. Telecommunication Engineering Department, Federal University of Ceará (UFC), Fortaleza, Ceará 60755–640, Brazil, Physics Department, Federal University of Ceará (UFC), Pici Campus, Fortaleza, Ceará 60455–760, Brazil;8. Physics Department, Faculty of Science, Tanta University, Al-Geish st., Tanta 31527, Egypt;9. Functional Materials and Devices Laboratory, Department of Materials Science and Engineering, University of Sheffield, S1 3JD, UK |
