Contrasting microwave dielectric properties of zircon-structured AEuV2O8 (A = Bi,La) ceramics |
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| Affiliation: | 1. Guangxi Universities Key Laboratory of Non-ferrous Metal Oxide Electronic Functional Materials and Devices, Guangxi Key Laboratory of Optical and Electronic Materials and Devices, College of Materials Science and Engineering, Guilin University of Technology, Guilin 541004, China;2. School of Mechanical Engineering, Guilin University of Aerospace Technology, Guilin 541004, China;3. College of Science, Guilin University of Technology, Guilin 541004, China;1. School of Metallurgical Engineering, Anhui University of Technology, Ma’anshan 243032, China;2. School of Chemistry and Resources Engineering, Honghe University, Mengzi 661199, China;3. State Key Laboratory of Vanadium and Titanium Resources Comprehensive Utilization, Panzhihua 617000, China;4. Institute of Energy, Hefei Comprehensive National Science Center, Hefei 230041, China;5. The State key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081, China;6. Bengbu Institute of Metrology, Anmin Road 100, Economic Development Zone, Bengbu 233017, China;7. College of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China;1. Guangxi Key Laboratory of Optical and Electronic Materials and Devices, College of Material Science and Engineering, Guilin University of Technology, Guilin 541004, China;2. Key Laboratory of Nonferrous Materials and New Processing Technology, Ministry of Education, Guilin University of Technology, Guilin 541004, China;3. Key Laboratory of Inorganic Nonmetallic Crystalline and Energy Conversion Materials, College of Materials and Chemical Engineering, China Three Gorges University, Yichang 443002, China;1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;2. Jiangxi Guo Chuang Industrial Park Development Co., Ltd., Ganzhou 341000, China;1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;2. Jiangxi Guo Chuang Industrial Park Development Co., Ltd, Ganzhou, China;1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;2. Information Materials and Device Applications Key Laboratory of Sichuan Provincial Universities, Chengdu University of Information Technology, Chengdu 610225, China |
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| Abstract: | Two zircon-structured ceramics AEuV2O8 (A = Bi, La) were prepared with optimal sintering temperatures of 900 °C and 1375 °C, respectively. They exhibited sharp contrast performances with medium εr ～ 28.7 ± 0.1, Q × f ～ 14,000 ± 300 GHz, and large positive τf ～ 75.7 ± 2.0 ppm/°C for BiEuV2O8, whereas low εr ～ 10.4 ± 0.1 Q × f ～ 25,100 ± 300 GHz, and negative τf ～ ? 40.7 ± 2.0 ppm/°C for LaEuV2O8. The rattling effect at the A-site was more dominant in determining microwave dielectric properties than that of compressed V5+ at the B-site. It resulted in the higher εr, lower Q × f and τε, and larger τf of BiEuV2O8 than those of LaEuV2O8. Besides, their Q × f was related with the relative density, bond valence and FWHM of the B1 g Raman mode. |
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| Keywords: | Microwave dielectric performance Zircon structure Bond valence Rattling effect Compressed effect |
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