Ferroelectric enhancement of Al-doped HfO2 thin films by rapid electron beam annealing in a low thermal budget |
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| Affiliation: | 1. National Institute for Research and Development in Microtechnologies — IMT Bucharest, 077190 Bucharest, Romania;2. University of Bucharest, Physics Faculty, PO Box MG-11, 077125 Bucharest, Romania;3. National Institute for Lasers, Plasma and Radiation Physics, PO Box MG-36, 077125 Bucharest, Romania;4. National Institute of Materials Physics, Atomistilor 405A, 077125 Bucharest, Romania;1. Department of Materials Science and Engineering, National Taiwan University, 1 Roosevelt Road, Sec. 4, Taipei 106, Taiwan;2. Asylum Research, an Oxford Instruments Company, Santa Barbara, CA 93117 USA;1. Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China;2. Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China;3. Laboratory of Solid State Microstructures and Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing 210093, China |
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| Abstract: | In past few years, there was a great amount of research on ferroelectric Al-doped HfO2 (HAO) thin films which suffer from the need of high annealing temperatures to achieve significant ferroelectricity. In this work, we realize pronounced remnant polarization 2Pr~29μC/cm2 of HAO using rapid electron beam annealing (EBA) with a large area. The simulation of electron beam trajectories reveals that the effect of EBA concentrates on the region ~20 nm below the sample surface, which highly benefits the process integration where a low thermal budget is required. The energy-dispersive X-ray and high-angle annular dark-field analyses reveal the interdiffusion between Al and Hf in the HAO layer treated by EBA. The pronounced ferroelectricity of HAO can be accounted for by the lattice strain, which facilities the formation of the orthorhombic phase, due to the substitution of Al for Hf as supported by the fast Fourier transformation diffraction pattern. |
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| Keywords: | Ferroelectricity Electron beam annealing Thin film Interdiffusion |
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