| 低电压高效率非晶硅发射极异质结UHF功率晶体管 |
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| 引用本文： | 王因生,盛文伟,张晓明,王晓雯.低电压高效率非晶硅发射极异质结UHF功率晶体管[J].半导体学报,1991,12(1):37-44. |
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| 作者姓名： | 王因生 盛文伟 张晓明 王晓雯 |
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| 作者单位： | 南京电子器件研究所 南京210018
(王因生，盛文伟，张晓明)，南京电子器件研究所 南京210018(王晓雯) |
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| 摘 要： | 本文报道了利用重掺杂氢化非晶硅作宽禁带发射极材料的低电压硅异质结UHF功率晶体管的实验结果.制备的器件在9伏电压、工作频率470MHz下,输出连续波功率4W,功率增益8.2dB,集电极效率72％.在迄今有关非晶硅发射极HBT的报道中。这是首次详细报道可工作于UHF频率的低电压非晶硅发射极异质结功率晶体管.文中还讨论了这种异质结构的低压功率器件的设计和制备应考虑的一些问题,并提出一些解决办法.
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| 关 键 词： | 功率晶体管 非晶硅 异质结 UHF |
Low Voltage High Efficient Amorphous-Si Emitter Heterojunction UHF Power Transistors |
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| Wang Yinsheng/Nanjing Electronic Devices Institute,NanjingSheng Wenwei/Nanjing Electronic Devices Institute,NanjingZhang Xiaoming/Nanjing Electronic Devices Institute,NanjingWang Xiaowen/Nanjing Electronic Devices Institute,Nanjing.Low Voltage High Efficient Amorphous-Si Emitter Heterojunction UHF Power Transistors[J].Chinese Journal of Semiconductors,1991,12(1):37-44. |
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| Authors: | Wang Yinsheng/Nanjing Electronic Devices Institute NanjingSheng Wenwei/Nanjing Electronic Devices Institute NanjingZhang Xiaoming/Nanjing Electronic Devices Institute NanjingWang Xiaowen/Nanjing Electronic Devices Institute Nanjing |
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| Abstract: | An UHF silicon heterojunction bipolar power transistor with a heavily doped hydrogenatedamorphous-silicon is reported.The present devices prepared can deliver 4.0 W output powerwith 72% collector efficiency and 8.2 dB gain at 470 MHz for 9.0 V low supply voltage. Thelow voltage amorphous-silicon heterojunction bippolar power transistors available in UHF bandis reported for the first time. In addition, the design and fabrication of low voltage power device using this kind of he-terojunction emitter structure are discussed, and several viable proposals are given. |
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| Keywords: | a-Si: H Heterojunction Microwave Bipolar Power Transistor |
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