| 基于锗硅异质纳米晶的非易失浮栅存储器的存储特性 |
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| 引用本文： | 闾锦,陈裕斌,左正,施毅,濮林,郑有炓. 基于锗硅异质纳米晶的非易失浮栅存储器的存储特性[J]. 半导体学报, 2008, 29(4): 770-773 |
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| 作者姓名： | 闾锦 陈裕斌 左正 施毅 濮林 郑有炓 |
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| 作者单位： | 南京大学物理系固体微结构国家实验室,南京210093 |
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| 基金项目： | 国家自然科学基金 , 国家重点基础研究发展计划(973计划) |
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| 摘 要： | 利用自组织生长和选择化学刻蚀方法在超薄SiO2隧穿氧化层上制备了渐变锗硅异质纳米晶,并通过电容.电压特性和电容-时间特性研究了该纳米结构浮栅存储器的存储特性.测试结果表明,该异质纳米晶非易失浮栅存储器具有良好的空穴存储特性,这是由于渐变锗硅异质纳米晶中Ge的价带高于Si的价带形成了复合势垒,空穴有效地存储在复合势垒的Ge的一侧.
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| 关 键 词： | 异质纳米晶 非易失浮栅存储器 电容,电压特性,自组织生长,选择化学刻蚀 |
| 文章编号： | 0253-4177(2008)04-0770-04 |
| 修稿时间： | 2007-09-16 |
Charge Storage Characteristics of Nonvolatile Floating-Gate Memory Based on Gradual Ge1-xSix/Si Heteronanocrystals |
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| Chen Yubin,Zuo Zheng,Shi Yi,Pu Lin,Zheng Youdou. Charge Storage Characteristics of Nonvolatile Floating-Gate Memory Based on Gradual Ge1-xSix/Si Heteronanocrystals[J]. Chinese Journal of Semiconductors, 2008, 29(4): 770-773 |
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| Authors: | Chen Yubin Zuo Zheng Shi Yi Pu Lin Zheng Youdou |
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| Affiliation: | National Laboratory of Solid State Microstructures,Department of Physics,Nanjing University,Nanjing 210093,China;National Laboratory of Solid State Microstructures,Department of Physics,Nanjing University,Nanjing 210093,China;National Laboratory of Solid State Microstructures,Department of Physics,Nanjing University,Nanjing 210093,China;National Laboratory of Solid State Microstructures,Department of Physics,Nanjing University,Nanjing 210093,China;National Laboratory of Solid State Microstructures,Department of Physics,Nanjing University,Nanjing 210093,China;National Laboratory of Solid State Microstructures,Department of Physics,Nanjing University,Nanjing 210093,China |
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| Abstract: | Gradual Ge1-xSix/Si hetero-nanocrystals on ultrathin SiO2 layers were fabricated by combining self-assembled growth and the selective chemical etching method.Charge storage characteristics of nonvolatile floating-gate memory based on gradual Ge1-xSix/Si hetero-nanocrystals have been fabricated and investigated through capacitance-voltage(C-V)and capacitance-time(C-t)measurements.The findings indicate that holes reach a longer retention time in gradual Ge1-xSix/Si hetero-nanocrystals,which can be attributed ... |
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| Keywords: | hetero-nanocrystals nonvolatile floating-gate memory capacitance-voltage measurement self-assembled growth selective chemical etching |
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