| 感应耦合等离子体源制备硬质类金刚石膜的研究 |
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| 引用本文： | 俞世吉,马腾才.感应耦合等离子体源制备硬质类金刚石膜的研究[J].核技术,2003,26(2):125-128. |
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| 作者姓名： | 俞世吉 马腾才 |
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| 作者单位： | 1. 中国科学院电子学研究所,北京,100080
2. 大连理工大学物理系,大连,116024 |
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| 基金项目： | 国家自然科学基金资助项目(50002002，19835030) |
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| 摘 要： | 采用感应耦合等离子体源(ICPS)成功地实现化学气相沉积硬质类金刚石(DLC)膜,并考察了基片负偏压对类金刚石膜沉积过程和薄膜性质的影响。薄膜的微观形貌、显微硬度、沉积速率以及结构成分分析表明感应耦合等离子体源适于制备硬质类金刚石膜,并且在相对较低的基片负偏压条件就可以获得高硬度的类金刚石膜。基片负偏压对类金刚石膜化学气相沉积过程和薄膜性质都有显著影响。
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| 关 键 词： | 感应耦合等离子体源 类金刚石膜 基片负偏压 |
| 修稿时间： | 2002年7月4日 |
Study of hard diamond-like carbon films deposited in an inductively coupled plasma source |
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| YU Shiji,MA Tengcai.Study of hard diamond-like carbon films deposited in an inductively coupled plasma source[J].Nuclear Techniques,2003,26(2):125-128. |
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| Authors: | YU Shiji MA Tengcai |
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| Affiliation: | YU Shiji1 MA Tengcai2 1 |
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| Abstract: | Chemical vapor deposition of the hard diamond-like carbon (DLC) films was achieved using an inductively coupled plasma source (ICPS). The microscopy, microhardness, deposition rate and structure characteristic of the DLC films were analyzed. It is shown that the ICPS is suitable for the hard DLC film deposition at relatively low substrate negative bias voltage, and the substrate negative bias voltage greatly affects chemical vapor deposition of the DLC film and its quality. |
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| Keywords: | Inductively coupled plasma source Diamond-like carbon film Substrate negative bias voltage |
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