| 微通道板增益衰减的理论分析 |
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| 引用本文： | 陶兆民 韦亚一. 微通道板增益衰减的理论分析[J]. 光电子技术, 1992, 12(1): 59-64 |
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| 作者姓名： | 陶兆民 韦亚一 |
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| 作者单位： | 中国科学院电子学研究所 北京 |
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| 摘 要： | 本文根据作者已有的实验数据和在前人工作的基础上,分析了导致微通道板经电子轰击后增益大幅度下降的原因.并据此对照国外同类产品剖析了目前国内微通道板生产中影响增益的几个因素,提出相应的改进意见.
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| 关 键 词： | 微通道板 增益衰减 电子储增器 |
Theoretical Analysis of Decay of MCP Gain |
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| Tao Zhaomin Wei Yayi. Theoretical Analysis of Decay of MCP Gain[J]. Optoelectronic Technology, 1992, 12(1): 59-64 |
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| Authors: | Tao Zhaomin Wei Yayi |
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| Abstract: | From the experimental results performed by authors and other workers, the causes of the decay of MCP gain after bombarding by electrons have been analysed. Several factors which effect the decay of MCP gain have been discussed, and the corresponding suggestions have been presented. |
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| Keywords: | MCp yield of secondary electron MCP gain decay of MCP |
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