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Comprehensive heat exchange model for a semiconductor laser diode
Authors:K.P. Pipe R.J. Ram
Affiliation:Res. Lab. of Electron., MIT, Cambridge, MA, USA;
Abstract:By measuring the total energy flow from an optical device, we can develop new design strategies for thermal stabilization. Here we present a comprehensive model for heat exchange between a semiconductor laser diode and its environment that includes the mechanisms of conduction, convection, and radiation. We perform quantitative measurements of these processes for several devices, deriving parameters such as a laser's heat transfer coefficient, and then demonstrate the feasibility of thermal probing for the nondestructive wafer-scale characterization of optical devices.
Keywords:
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