| 紫外纳米压印抗蚀剂的研究进展 |
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| 引用本文： | 肖时卓,邹应全. 紫外纳米压印抗蚀剂的研究进展[J]. 信息记录材料, 2009, 10(5): 47-52 |
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| 作者姓名： | 肖时卓 邹应全 |
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| 作者单位： | 北京师范大学,化学学院,北京,100875 |
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| 摘 要： | 本文介绍了纳米压印技术的基本原理。总结了紫外纳米压印抗蚀剂的种类以及组分。具体包括丙烯酸酯体系、环氧树脂体系和乙烯基醚体系的配方组成及单体合成方法。比较了各个体系的优缺点。本文还分析了目前国内纳米压印抗蚀剂的研究现状并对其研究方向进行了分析与展望。
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| 关 键 词： | 紫外纳米压印抗蚀剂 纳米压印技术(NIL) 丙烯酸酯 环氧树脂 乙烯基醚 |
The Progress of Study on UV Nanoimprint Resists |
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| XIAO Shi-zhuo,ZOU Ying-quan. The Progress of Study on UV Nanoimprint Resists[J]. Information Recording Materials, 2009, 10(5): 47-52 |
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| Authors: | XIAO Shi-zhuo ZOU Ying-quan |
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| Affiliation: | XIAO Shi-zhuo,ZOU Ying-quan(College of chemistry,Beijing Normal University,Beijing 100875,China ) |
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| Abstract: | This basic principles of nanoimprint lithography technology and the recent progress in the study of ultraviolet nanoimprint resists wore reviewed.The categories of photoresists for UV nanoimprint lithography and the compositions of each category were summarized.The synthesis of monomers and the composition of photoresists are introduced respectively. The photoresists mainly include acrylate system,epoxy resin system and silicon-containing vinyl ether system. The advantages and disadvantages of the photoresi... |
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| Keywords: | UV nanoimprint resists Nanoimprint lithography acryl ate epoxy resin silicon-containing vinyl ether |
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