Calculated performances of 1.3-μm vertical-cavitysurface-emitting lasers on InGaAs ternary substrates

1.3-μm vertical-cavity surface-emitting lasers (VCSEL's) on InGaAs ternary substrates are proposed and designed, It is shown that a deep potential well on the ternary substrate enlarges optical gain of a strained quantum well in the wavelength region of 1.3 μm. A higher reflectivity distributed Bragg reflector (DBR) is also obtained by the use of the ternary substrate because materials with a large refractive-index difference can be used for the DBR. Calculated threshold current density of 1.3-μm VCSEL's on the ternary substrates is much lower than those on the conventional InP substrates. The possibility of extremely low threshold current density below 200 A/cm ² and temperature-insensitive operation are described