Effects of dopants and copolymerization on Schottky barriers of polypyrrole and polyindole/metal interfaces

Schottky-barrier diode devices were fabricated in a sandwich configuration with poly(pyrrole-co-indole) copolymer semiconducting films prepared by electropolymerization. Effect of different dopants of ClO₄ ^?, BF₄ ^?, C₇H₇SO₃ ^? and [Fe(CN)₆]^3? on the electronic properties of the fabricated devices was followed using Ag, In, Al and Cu metal junctions. Current?Cvoltage and capacitance?Cvoltage characteristics were recorded for making a comparative evaluation of the electronic and junction properties of the devices. The electrical characteristics of the junctions were analyzed based on the standard thermionic emission theory. Polymer doped by ClO₄ ^? showed lower reverse saturation currents and ideality factor but higher potential barriers and rectification ratios. Effect of dopant ions and copolymerization on the optical band gaps (E _g) of the films were investigated and the optical transmissions of the doped copolymer films were measured in the wavelength range of 250?C900?nm. It was shown that the energy gap of copolymers laid between those of corresponding homopolymers and polyindole (PIN) doped by [Fe(CN₆)]^?3 had E _g less than that of polymer doped by other anions whereas E _g of polypyrrole was independent of dopant ions. Also, the morphology of the polymeric films revealed the surface of the PIN doped with ClO₄ ^? was very smooth which created a good contact with indium metal.