Estimation of effective diffusion time in a rapid thermal diffusionusing a solid diffusion source |
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Authors: | Cho B.-J. Park S.-K. Kim C.-K. |
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Affiliation: | Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Seoul; |
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Abstract: | Two-step rapid thermal diffusion (RTD) of phosphorus and boron using a solid diffusion source is described. From the application of the Boltzmann-Matano method to SIMS profiles of phosphorus and boron after RTD, it has been found that some additional correction terms to the effective diffusion time must be introduced. In the phosphorus diffusion case, the increment of the effective diffusion time due to the supersaturation of point defects during the cooling cycle is about 3 s. In the case of boron diffusion, the additional effective diffusion time is a strong function of diffusion temperature. This has been explained as the effect of initial growth of the boron-rich layer during the glass-transfer process. The introduction of additional correction terms to the effective diffusion time makes it possible to treat the RTD process in a similar manner to normal diffusion |
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