Terahertz imaging with bow-tie InGaAs-based diode with broken symmetry |
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| Authors: | Kasalynas I Seliuta D Simniskis R Tamosiunas V Kohler K Valusis G |
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| Affiliation: | Semicond. Phys. Inst., Vilnius, Lithuania; |
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| Abstract: | A silicon-lens coupled bow-tie InGaAs-based diode with broken symmetry is demonstrated for terahertz imaging applications below 1 THz at room temperature. Transient features and the dynamic range of the bow-tie InGaAs-based sensor are explored experimentally, proving the possibility to use the device in real-time imaging systems. Response time is found to be less than 7 ns, responsivity of 0.1 mA/W, and noise equivalent power of 5.8 nW/radicHz. |
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