Millimetre-wave InP/InGaAs heterojunction bipolar transistors witha subpicosecond extrinsic delay time |
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| Authors: | Song J.-I. Hong W.-P. Palmstrom C.J. van der Gaag B.P. Chough K.B. |
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| Affiliation: | Bellcore, Red Bank, NJ; |
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| Abstract: | We report the microwave characteristics of InP/InGaAs heterojunction bipolar transistors (HBTs) using a carbon-doped base grown by chemical beam epitaxy (CBE). An extrinsic delay time of 0.856 ps was achieved by nonequilibrium transport in a very thin base layer and extremely small emitter parasitic resistance through the use of silicon δ-doping in the emitter ohmic contact layer. To our knowledge, this is the shortest extrinsic delay time of any bipolar transistors reported. This result indicates the great potential of InP/InGaAs HBTs for applications requiring a very large bandwidth |
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