MBE growth of HgCdTe on silicon substrates for large-area infrared focal plane arrays: A review of recent progress |
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Authors: | T J de Lyon J E Jensen M D Gorwitz C A Cockrum S M Johnson G M Venzor |
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Affiliation: | (1) HRL Laboratories, 3011 Malibu Canyon Rd., 90265 Malibu, CA;(2) Raytheon Infrared Center of Excellence, 75 Coromar Drive, 93117 Goleta, CA |
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Abstract: | We review the rapid progress that has been made during the past three years in the heteroepitaxial growth of HgCdTe infrared
detector device structures on Si substrates by molecular-beam epitaxy. The evolution of this technology has enabled the fabrication
of high performance, large-area HgCdTe infrared focal-plane arrays on Si substrates. A key element of this heteroepitaxial
approach has been development of high quality CdTe buffer layers deposited on Si(112) substrates. We review the solutions
developed by several groups to address the difficulties associated with the CdTe/Si(112) heteroepitaxial system, including
control of crystallographic orientation and minimization of defects such as twins and threading dislocations. The material
quality of HgCdTe/Si and the performance of HgCdTe detector structures grown on CdTe/Si(112) composite substrates is reviewed.
Finally, we discuss some of the challenges related to composition uniformity and defect generation encountered with scaling
the MBE growth process for HgCdTe to large-area Si substrates. |
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Keywords: | CdTe CdTe/Si focal-plane arrays (FPAs) heteroepitaxy HgCdTe HgCdTe/Si infrared detectors molecular beam epitaxy (MBE) |
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