氢化非晶硅薄膜的性能研究

本文研究了PECVD系统沉积薄膜及其特性．通过椭偏仪测出了薄膜的膜厚, 采用电子薄膜应力分布测试仪分析了薄膜应力,并运用四探针装置研究了电阻率、方阻、TCR及它们之间的相互关系。结果表明,所沉积的薄膜覆形特性好、沉积速度快, 沉积速率达到了31．89nm／min,另外,它还具有低应力、高TCR的特点;当薄膜电阻率处在一定的范围内时,通过数据分析,电阻率与TCR之间几乎成线性关系．

Properties of Films by PECVD Deposition

The properties of the films by PECVD deposition have been studied. The thickness of the film was measured by a spectroscopic ellipsometer. The film stress was analyzed by a stress distribution test instrument. The resistivity, square resistence, TCR and the relation among them were investigated by a four-probe instrument. It has been found that the film by PECVD deposition is symmetrical and its depositon rate is up to 31.89nm/min. The film has low stress and high TCR. Through data analysis, it is concluded that the relation between the resistivity and TCR of the film is nearly linear in a given resistivity range.