| MOCVD Growth of Doped GaAs/AlGaAs Quantum Heterostructures |
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| 作者姓名： | 任红文 徐现刚 黄柏标 刘士文 蒋民华 |
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| 作者单位： | Institute of Crystal Materials Shandong University. Jinan China 250100，Institute of Crystal Materials Shandong University. Jinan China 250100，Institute of Crystal Materials Shandong University. Jinan China 250100，Institute of Crystal Materials Shandong University. Jinan China 250100，Institute of Crystal Materials Shandong University. Jinan China 250100 |
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| 摘 要： | The influences of growth techniques of AP-MOCVD GaAs/AlGaAs silicon-doped multi-quantum wells(MQWs), heterostructure bipolar transistors (HBTs), double barrier resonant tunneling diodes(DBRTDs) ontheir structures and performances were studied. Continuously grown MQWs, that is, no growth interruption atthe heterointerfaces, shown blue-shifted, narrower and stronger photoluminescence(PL) compared withinterruptedly grown ones.TEM examination of the interrupted interfaces revealed a bright line correspondingto the compositional fluctuation and impurity adsorption, and indicated noncommutative structures ofAlGaAs/GaAs and GaAs/AlGaAs interfaces. High performance HBTs and DBRTDs were obtained bycontinuously grown method while growth interruption caused performance degradation. It was concluded thatgrowth interruption may cause accumulation of residua1 impurities in the ambient as well as compositionalfluctuation while continuous growth at very low growth rates can overcome such problems.
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MOCVD Growth of Doped GaAs/AlGaAs Quantum Heterostructures |
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| Ren Hongwen,Xu Xian'gang,Huang Baibiao,Liu Shiwen,Jiang Minhua Institute of Crystal Materials,Shandong University. Jinan ,China.MOCVD Growth of Doped GaAs/AlGaAs Quantum Heterostructures[J].Rare Metals,1993(1). |
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| Authors: | Ren Hongwen Xu Xian'gang Huang Baibiao Liu Shiwen Jiang Minhua Institute of Crystal Materials Shandong University Jinan China |
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| Affiliation: | Ren Hongwen,Xu Xian'gang,Huang Baibiao,Liu Shiwen,Jiang Minhua Institute of Crystal Materials,Shandong University. Jinan 250100,China |
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| Abstract: | The influences of growth techniques of AP-MOCVD GaAs/AlGaAs silicon-doped multi-quantum wells (MQWs), heterostructure bipolar transistors (HBTs), double barrier resonant tunneling diodes(DBRTDs) on their structures and performances were studied. Continuously grown MQWs, that is, no growth interruption at the heterointerfaces, shown blue-shifted, narrower and stronger photoluminescence(PL) compared with interruptedly grown ones.TEM examination of the interrupted interfaces revealed a bright line corresponding to the compositional fluctuation and impurity adsorption, and indicated noncommutative structures of AlGaAs/GaAs and GaAs/AlGaAs interfaces. High performance HBTs and DBRTDs were obtained by continuously grown method while growth interruption caused performance degradation. It was concluded that growth interruption may cause accumulation of residua1 impurities in the ambient as well as compositional fluctuation while continuous growth at very low growth rates can overcome such problems. |
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| Keywords: | MOCVD Interrupted growth GaAs / AlGaAs Hetero-interface |
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