Effect of process variations and ambient temperature on electron mobility at the SiO/sub 2//4H-SiC interface |
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| Authors: | Chao-Yang Lu Cooper J.A. Jr. Tsuji T. Gilyong Chung Williams J.R. McDonald K. Feldman L.C. |
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| Affiliation: | Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA; |
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| Abstract: | We report the effect of processing variables on the inversion layer electron mobility of (0001)-oriented 4H-SiC n-channel MOSFETs. The process variables investigated include: i) implant anneal temperature and ambient; ii) oxidation procedure; iii) postoxidation annealing in nitric oxide (NO); iv) type of gate material, and v) high-temperature ohmic contact anneal. Electron mobility is significantly increased by a postoxidation anneal in NO, but other process variations investigated have only minor effects on the channel mobility. We also report the temperature dependence of electron mobility for NO and non-NO annealed n-channel MOSFETs. |
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