X-ray beam induced current method at the laboratory x-ray source |
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| Authors: | Fahrtdinov R R Feklisova O V Grigoriev M V Irzhak D V Roshchupkin D V Yakimov E B |
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| Affiliation: | Institution of Russian Academy of Sciences, Institute of Microelectronics Technology, and High-Purity Materials RAS, Chernogolovka 142432 Russia. |
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| Abstract: | The x-ray beam induced current method (XBIC) is realized on the laboratory x-ray source using the polycapillary x-ray optics. It is shown that rather good images of grain boundaries in Si can be obtained by this method. The parameters of x-ray beam are estimated by the simulation of Schottky diode image. A good correlation between the experimental and calculated grain boundary XBIC contrast is obtained. The possibilities of laboratory source based XBIC method are estimated. |
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