Compact models for silicon carbide power devices |
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| Affiliation: | 1. University of Arkansas, BEC 3217, Fayetteville, AR 72701, USA;1. Electrical Engineering Department, Centro Universitário FEI, Sao Bernardo do Campo, Brazil;2. SEES, CINVESTAV, Mexico City, Mexico;1. State Key Laboratory of Automotive Simulation and Control, Jilin University, Changchun, PR China;2. Department of Control Science and Engineering, Jilin University, Changchun, Renmin Street. 5988, 130012, China;1. STMicroelectronics, 850 rue Jean Monnet, BP 16, 38926 Crolles, France;2. IMEP-LAHC, Minatec/INPG, BP 257, 38016 Grenoble, France;1. University of Messina, Messina, Italy;2. ST-Microelectronics, Catania, Italy |
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| Abstract: | Compact silicon carbide (SiC) power semiconductor device models for circuit simulation have been developed for power Schottky, merged-PiN-Schottky, PiN diodes, and MOSFETs. In these models, the static and dynamic performance of the power SiC devices requires specific attention to the low-doped, voltage blocking drift region; the channel transconductance in MOS devices; the relatively low-intrinsic carrier concentration; the incomplete ionization of dopants; and the temperature dependent material properties. The modeling techniques required to account for each of these characteristics are described. |
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