多热源合成SiC传热规律

对多热源合成SiC冶炼炉的温度场进行了数值模拟,研究了冶炼炉内的温度分布、热流强度以及温度梯度的动态变化规律,揭示了多热源合成SiC的传热传质规律.研究表明, 由于多热源之间的屏蔽作用与热能叠加作用,导致多热源合成SiC技术比Acheson单热源炉的单炉产量提高48.1%,特、一级品率提高30%,节能10%以上,并且杜绝了单热源生产中频繁喷炉事故,使生产更安全.

Heat transfer law in multi-heat-source synthesis of silicon carbide

Through numerically simulating the temperature field in a multi-heat-source synthetic SiC furnace, the temperature distribution at characteristic points was obtained, and the dynamic laws of thermal gradient and thermal flow intensity were put forward. The heat and mass transfer law in multi-heat-source synthesis of silicon carbide were revealed. It was shown that due to the superposition effect of thermal fields and the shielding action of furnace cores, the SiC output of the multi-heat-source furnace increased by 48.1% compared with that of an Acheson singleheat-source furnace, the highest grade SiC increased by 30%, and the consumed energy reduced more than 10%. In addition, the frequent spouting was diminished, and the furnace was become more productive and safe.