Generalization of Einstein relation for organic semiconductor thin films |
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| Affiliation: | 1. Key Laboratory of Textile Science & Technology, Ministry of Education, College of Textiles, Donghua University, Shanghai 201620, China;2. State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China;3. School of Textile and Materials, Xi’an Polytechnic University, Xi’an 710048, China;4. Key Laboratory of High Performance Fibers and Products Ministry of Education, Donghua University, Shanghai 201620, China;5. Nanofibers Research Center, Modern Textile Institute, Donghua University, Shanghai 200051, China;1. Solar Application Lab, Department of Physics, G. C. University Lahore, Punjab 54000, Pakistan;2. Department of Materials Science and Engineering, University of Delaware, Delaware 19716, USA;3. Department of Physics and Astronomy, University of Delaware, Delaware 19716, USA;4. Pakistan Council of Renewable Energy Technologies, 25, H-9, Islamabad, Pakistan;1. GEEPS, CNRS, CentraleSupelec, UPSud, UPMC, 11 Rue Joliot Curie, 91192, Gif sur Yvette, France;2. IFIS-Litoral, Güemes 3450, S3000GLN, Santa Fe, Argentina;3. TFSC-Instrument, 3 Rue Léon Blum, 91120, Palaiseau, France;4. Université Grenoble-Alpes, INES, F-73375, Le Bourget du lac, France;5. CEA, LITEN, Department of Solar Technologies, F-73375, Le Bourget du lac, France;1. Al-Farabi Kazakh National University, Almaty 050040, Kazakhstan;2. Nuclear Reaction Data Centre, Faculty of Science, Hokkaido University, Sapporo 060-0810, Japan;3. Bogolyubov Institute for Theoretical Physics, Kiev 03143, Ukraine |
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| Abstract: | ![]()
Under the basis of Gaussian energy distributions of the lowest unoccupied molecular orbital (LUMO) and the highest occupied molecular orbital (HOMO), analytical expressions of generalized Einstein relation for electron and hole transport in organic semiconductor thin films are developed. Numerical calculations show that, although traditional Einstein relation is still valid for low carrier concentrations, when the carrier concentration is high, the diffusion coefficient–mobility ratio increases rapidly with the carrier concentration. A relative turning carrier concentration, characterizing the upper limit of the validity of traditional Einstein relation is defined. The dependences of the relative turning concentration on the variance of LUMO or HOMO energy distributions as well as the sample temperature, and the applications of the generalized Einstein relation in the analysis of organic light-emitting device are discussed. |
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