Deposition and characteristics of CdO films with absolutely (200)-preferred orientation |
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| Affiliation: | 1. Polymeric Materials Research Lab, PG & Research Department of Chemistry, Alagappa Government Arts College, Karaikudi, 630 003, India;2. Department of Chemical and Biological Engineering, University of Ottawa, 161 Louis Pasteur St, Ottawa, ON, K1N 6N5, Canada;1. Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Laboratory for Advanced Energy Technology, Key Laboratory of Macromolecular Science of Shaanxi Province, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China;2. Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China;1. BioMEMS and Microsystems Laboratory, Department of Electrical and Computer Engineering, Florida International University, Miami, Florida 33174, United States of America;2. Global Foundaries, Malta, New York 12020, United States of America;3. Advanced Materials Engineering Research Institute, Florida International University, Miami, Florida 33174, United States of America;4. Department of Physics, Panjab University, Chandigarh 160014, India;1. Graduate School of Engineering, Nagoya Institute of Technology, Nagoya, Aichi 466-8555, Japan;2. Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan;3. Department of Physics, Technical University of Munich, Garching 85749, Germany;4. Department of Pure and Applied Physics, Kansai University, Suita, Osaka 564-8680, Japan;5. Center for Spintronics Research Network, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan |
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| Abstract: | CdO crystal thin films with (200)-preferred orientation have been prepared on Si and glass substrates by dc reactive magnetron sputtering method. At an optimum substrate temperature of 375 °C, the film has the best crystal quality. By the electrical and transmittance measurements the film shows large carrier concentration of 2.00×1020/cm3, Hall mobility of 64 cm2/V s, resistivity of 4.87×10−4 Ω cm and a high average transmittance over 80% in the visible region together with a direct band gap of 2.43 eV. In view of the Burstein–Moss (BM) shift, theoretical calculations show that the film has a direct band gap of 2.17 eV, close to its intrinsic band gap of 2.2 eV. The photoluminescence (PL) measurement shows that the pure CdO film has no luminescence behavior, but it can alloy with ZnO to realize its applications in luminescent devices. |
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