A low-cost horizontal current bipolar transistor (HCBT) technology for the BiCMOS integration with FinFETs |
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| Affiliation: | 1. Faculty of Electrical Engineering and Computing, Department of Electronics, University of Zagreb, Unska 3, 10000 Zagreb, Croatia;2. Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong;3. Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, CA 90095, USA;1. School of Chemistry and Materials Engineering, Huaihua University, Huaihua 418000, China;2. Zhejiang Lab, Hangzhou 311100, China;3. College of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;4. College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, China;1. Department of Environmental Biology, University of Rome “la Sapienza”-V. le dell’Università 32, 00185 Rome, Italy;2. Department of Statistica, Sciences, University of Rome “la Sapienza”- V. le dell’Università 32, 00185 Rome, Italy;1. School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA;2. Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, USA;3. Biomaterials Innovation Research Center, Division of Biomedical Engineering, Department of Medicine, Brigham and Women’s Hospital, Harvard Medical School, Cambridge, MA 02139, USA;4. Harvard-MIT Division of Health Sciences and Technology, Massachusetts Institute of Technology, Cambridge, MA, USA;5. Wyss Institute for Biologically Inspired Engineering, Harvard University, Boston, MA 02115, USA;6. Department of Maxillofacial Biomedical Engineering and Institute of Oral Biology, School of Dentistry, Kyung Hee University, Seoul 130-701, Republic of Korea;7. Department of Physics, King Abdulaziz University, Jeddah 21569, Saudi Arabia;1. Centro Nacional de Investigación y Desarrollo Tecnológico CENIDET-TecNM-SEP, Prol. Av. Palmira S/N. Col. Palmira, Cuernavaca, Morelos, CP. 62490, Mexico;2. Centro de Educación Científica y de Educación Superior de Ensenada (CICESE), Carretera Ensenada-Tijuana No.3918, Zona Playitas, Ensenada, 22860, Baja California, Mexico;3. Universidad Juárez Autónoma de Tabasco, División Académica de Ingeniería y Arquitectura (DAIA-UJAT), Carretera Cunduacán-Jalpa de Méndez km. 1, Cunduacán, Tabasco, CP 86690, Mexico;1. Center for Advancing Materials Performance from the Nanoscale (CAMP-Nano), State Key Laboratory for Mechanical Behavior of Materials, Xi''an Jiaotong University, Xi''an, 710049, PR China;2. Department of Materials Science and Engineering, Indian Institute of Technology, Delhi, 110016, India;3. Department of Nuclear Science and Engineering, Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA |
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| Abstract: | A novel Horizontal Current Bipolar Transistor (HCBT) is processed with the scaled down dimensions and the improved technology. The active transistor region is built in the defect-free sidewall of the 580 nm wide n-hills in the (1 1 0) wafer, implying the reduction of the parasitic region's volume, i.e. the extrinsic base and the collector. The fabricated HCBT exhibits the cutoff frequency (fT) of 21.4 GHz, the maximum frequency of oscillations (fmax) of 32.6 GHz and the collector–emitter breakdown voltage (BVCEO) of 5.6 V, which are the highest fT and the highest fTBVCEO product among the lateral bipolar transistors (LBTs). |
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