Influence of V2O5 additions to Ba(Mg1/3Ta2/3)O3 ceramics on sintering behavior and microwave dielectric properties |
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| Affiliation: | 1. School of Materials Science and Engineering, Changwon National University, Changwon, Gyeongnam, 51140 South Korea;2. Department of Physics, Abdul Wali Khan University Mardan, Pakistan;1. School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg 620000, Russia;2. Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi’an Jiaotong University, Xi’an 710049, China;1. Institute of Physics, University of Silesia, Uniwersytecka 4, 40-007 Katowice, Poland;2. Institute of Physics, Pedagogical University, Podchorazych 2, 30-084 Krakow, Poland;1. School of Materials Science and Engineering, Shandong University of Technology, 266 West Xincun Road, Zibo 255049, Shandong, People’s Republic of China;2. Functional Materials Research Laboratory, Tongji University, Caoan Road 4800, Shanghai 201804, People’s Republic of China;3. Primary Education, Zibo Normal College, 99 Tangjun-ouling Road, Zibo 255130, Shandong, People’s Republic of China |
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| Abstract: | The microstructures and the microwave dielectric properties of barium magnesium tantalate ceramics prepared by conventional mixed oxide route have been investigated. The prepared Ba(Mg1/3Ta2/3)O3 exhibited a mixture of cubic perovskite and a hexagonal superstructure with Mg and Ta showing 1:2 order in the B-site. It is found that low level doping of V2O5 (up to 0.5 wt.%) can significantly improve densification of the specimens and their microwave dielectric properties. The density of doped Ba(Mg1/3Ta2/3)O3 ceramics can be increased beyond 95% of its theoretical value by 1500 °C-sintering, which is caused by the liquid-phase effect of V2O5 addition. The detected second phase Ta2O5 was mainly the result of V5+ substitution in the ceramics. Dielectric constant (εr) and temperature coefficient of resonant frequency (τf) were not significantly affected, while the unloaded quality factors Q were effectively promoted by V2O5 addition due to the increase in B-site ordering. The εr value of 24.1, Q×f value of 149,000 (at 10 GHz) and τf value of 7.2 ppm/°C were obtained for Ba(Mg1/3Ta2/3)O3 ceramics with 0.25 wt.% V2O5 addition sintered at 1500 °C for 3 h. |
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