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Studies on silicon-on-insulator-multilayer structures prepared by epitaxial layer transfer
Affiliation:1. Department of Physics, Zhongshan University, Guangzhou 510275, People''s Republic of China;2. Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong, People''s Republic of China;3. Shanghai Institute of Metallurgy, Chinese Academy of Science, Shanghai 200083, People''s Republic of China;1. Department of Applied Chemistry, Harbin Institute of Technology, Harbin 150001, PR China;2. Center for Composite Materials, Harbin Institute of Technology, Harbin 150001, PR China;1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, P.O. Box 912, Beijing 100083, PR China;2. Department of Material Science and Engineering, University of Toronto, Toronto, Ontario, Canada M5S 3E4
Abstract:The silicon-on-insulator-multilayer (SOIM) structures were proposed and successfully fabricated by epitaxial layer transfer technology. The properties of the structures were investigated using cross-sectional transmission electron microscopy (XTEM) and spreading resistance profiling. Experimental results show that the buried Si3N4 layer is amorphous and the new SOIM sample has good structural and electrical properties. The new SOIM device has been verified in two-dimensional device simulation and indicated that the new structures reduce device self-heating and increase the drain of the SOI MOSFET.
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