The effect of sintering on the properties of Ba0.7Sr0.3TiO3 ferroelectric films produced by electrophoretic deposition |
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| Affiliation: | 1. School of Electrical Engineering, Xi’an Jiaotong University, 710049 Xi’an, China;2. State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, 710049 Xi’an, China;3. State Key Laboratory of Electrical Insulation and Power Equipment, Xi’an Jiaotong University, 710049 Xi’an, China;1. Department of Physics, Kumaraguru College of Technology, Coimbatore 641049, Tamil Nadu, India;2. Departments of Physics, Kongunadu Arts and Science College, G.N-Mills, Coimbatore 641029, Tamil Nadu, India;3. Environment and Sustainability Institute, University of Exeter, Exeter, UK;4. Department of Biotechnology, Dr.N.G.P. Arts and Science College, Coimbatore, Tamil Nadu, India;1. Microwave Lab, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India;2. Department of Metallurgical and Materials Engineering, Indian Institute of Technology Madras, Chennai 600036, India;1. Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry of CAS, Urumqi 830011, China;2. University of Chinese Academy of Sciences, Beijing 100049, China;3. Kazuo Inamori School of Engineering, New York State College of Ceramics at Alfred University, Alfred, NY 14802, USA;1. Instrumental Analysis and Research Center, Shanghai University, Shanghai 200444, China;2. Department of Applied Physics, Donghua University, Shanghai 201620, China |
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| Abstract: | Ba0.7Sr0.3TiO3 (BST) films were produced on metal substrate using electrophoretic deposition (EPD) followed by high temperature sintering. The composition, crystal structure and microstructure of the deposited films were characterised using scanning electron microscopy (SEM) and X-ray diffractometry (XRD). The sintered BST films showed a sharp perovskite structure with uniform microstructure. The results indicated that a typical BST film of 20 μm thick after sintering for 2–10 h exhibited the relative dielectric constant ranging from 3100 to 5100 at 20 °C and dissipation factor of 0.061–0.118 at 1 kHz. The density, crystallinity, microstructural uniformity and dielectric properties of the BST films reached their best values after 8 h annealing at 1350 °C. These films also possess excellent adhesion to the substrate. |
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