Luminescence properties of spark-processed SiC |
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| Affiliation: | 1. Department of Ceramic Engineering, Kangnung National University, 123 Chibyon, Kangnung, Kangwondo 210-702, South Korea;2. International Innovation Center Kyoto University, Sakyo, Kyoto 606-8501, Japan;1. NanoPower Research Laboratory, Rochester Institute of Technology, Rochester, NY 14623, USA;2. Electronics Science and Technology Division, United States Naval Research Laboratory, Washington, DC 20375, USA;3. Department of Chemical Engineering, Rochester Institute of Technology, Rochester, NY 14623, USA;4. Department of Microsystems Engineering, Rochester Institute of Technology, Rochester, NY 14623, USA;1. National Research Council of Italy, Institute of Science and Technology for Ceramics, Via Granarolo, Faenza RA, 64-48018, Italy;2. Department of Inorganic Chemistry, University of Seville, 41012 Sevilla, Spain;3. Department of Industrial Engineering, University of Naples Federico II, P.le Tecchio 80, 80125 Naples, Italy;4. Department of Enterprise Engineering Mario Lucertini, University of Rome Tor Vergata, Via del Politecnico 1, 00133 Rome, Italy;5. Department of Engineering, University of Campania Luigi Vanvitelli, Via Roma 29, 81031 Aversa, Ce, Italy;1. College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, China;2. College of Materials Science and Engineering, China Jiliang University, Hangzhou 310018, China;1. School of Materials Science and Engineering, Anhui University of Science and Technology, Huainan, Anhui 232001, China;2. State Key Lab of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China;3. Tianjin Key Laboratory of Thin Film and Opitcs, Tianjin Jinhang Institute of Technical Physics, Tianjin 300192, China |
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| Abstract: | The photoluminescence (PL) properties of spark-processed SiC (sp-SiC) have been studied at various temperatures. Furthermore, scanning electron micrographs (SEM), X-ray diffraction (XRD) measurements, Fourier transform infrared (FTIR) spectroscopy, X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy have been applied. The luminescence properties of sp-SiC are quite different from unspark-treated reference 6 H SiC. Specifically, the PL intensities of sp-SiC are at least two orders of magnitude larger than the reference SiC. Furthermore, the room temperature PL spectrum of sp-SiC exhibits two luminescence bands peaking at 3.18 eV, which are considerably blue shifted from SiC band gap of 2.9 and 2.43 eV. However, these two luminescence bands show an unusual red-shift of PL peak energies with decreasing temperature. Raman spectroscopy studies of sp-SiC display the emergence of a crystalline Si vibrational mode, whereas vibrational modes associated with 6H SiC are completely annihilated. XRD analysis exhibits the formation of polycrystalline Si after spark processing. Vibrational modes obtained from FTIR for sp-SiC are mainly composed of Si–O modes with some OH vibration. The results of low temperature PL studies, FTIR, XRD, XPS and Raman spectroscopy demonstrate that the luminescence properties of sp-SiC are similar to spark-processed Si. |
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