Scaling rules for SOI MOSFETs operating in the fully inverted mode |
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Affiliation: | 1. Department of Computer Science, Jamia Millia Islamia, New Delhi, India;2. Higher Education Department, J&K, India;3. Lelafe IT Solutions, J&K, India |
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Abstract: | Two-dimensional device simulation was performed on silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect-transistors (MOSFETs) with various gate length Lg various top Si layer thickness tSi and various buried oxide (BOX) layer thickness tBOX. As a result, it was found that when tBOX is large, short channel effect (SCE) cannot be suppressed in a fully depleted (FD) MOSFET only by the simple scaling rule maintaining the ratio of Lg to top Si layer tSi more than four. It was also found that the scaling rule breaks down more seriously in a fully inverted (FI) MOSFET. It was confirmed that electric field from the drain region penetrates easily into thick BOX layer, which causes drain-induced barrier lowering (DIBL) at the top Si/BOX interface in deep sub-micron gates SOI MOSFETs. Consequently, it was concluded that the DIBL can be suppressed efficiently by reducing tBOX even in a FI MOSFET. |
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