Plasma immersion ion implantation doping using a microwavemultipolar bucket plasma |
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Authors: | Qin S. McGruer N.E. Chan C. Warner K. |
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Affiliation: | Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA; |
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Abstract: | Using plasma immersion ion implantation, silicon has been doped with boron in a high-voltage pulsed microwave multipolar bucket plasma system. Diborane gas (1%) diluted in helium is used as an ion source. A sheet resistance of 57 Ω/□ and an implanted dose of 1.9×1015/cm2 are obtained in 10 min. when the target potential is pulsed to -10 kV with a 1% duty cycle. The boron profile in the silicon substrate is different from that predicted for a conventional 10-keV ion implantation. Silicon p-n junctions fabricated by this technique are of good quality |
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